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Surface roughness development during photoresist dissolution
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
The minimization of nanoscale roughness in patterned images has become a priority for the process of photolithography in the production of microprocessors. In order to probe the molecular basis for surface roughness, the development of photoresist has been simulated through application of the critical-ionization model to a three-dimensional molecular lattice representation of the polymer matrix. The model was adapted to describe chemically amplified photoresists of the sort now commonly used indoi:10.1116/1.590763 fatcat:2gubovwoarcpzotmr7wmk4o4ui