Cyclic PECVD of Ge[sub 2]Sb[sub 2]Te[sub 5] Films Using Metallorganic Sources

Byung Joon Choi, Seol Choi, Yong Cheol Shin, Cheol Seong Hwang, Jin Wook Lee, Jaehack Jeong, Yoon Jung Kim, Sung-Yeon Hwang, Suk Kyoung Hong
2007 Journal of the Electrochemical Society  
Ge 2 Sb 2 Te 5 ͑GST͒ thin films were deposited on SiO 2 /Si and TiN/Si substrates by cyclic metallorganic chemical vapor deposition using Ge͑i-C 4 H 9 ͒ 4 , Sb͑i-C 3 H 7 ͒ 3 , Te͑i-C 3 H 7 ͒ 2 as Ge, Sb, and Te precursors, respectively, with the help of Ar + H 2 plasma at temperatures ranging from 180 to 290°C. The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the
more » ... trolled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200°C showed a smooth surface morphology, highest density, and lowest impurity concentration. GST film was selectively grown inside the contact hole having a TiN/W plug.
doi:10.1149/1.2456199 fatcat:icfzosuthzdexknznkf2jkk5ei