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InGaN / GaN multiple-quantum-well ͑MQW͒ blue and green-light-emitting diodes ͑LEDs͒ were grown on sapphire substrates using metalorganic vapor phase epitaxy. High-resolution transmission microscopy shows that a much larger density of stacking faults exist in the quantum-well region of the blue LEDs than in the green LEDs. In the green LEDs, the blueshift in the electroluminescence ͑EL͒ emission energy at larger driving currents is more prominent than in the blue LEDs, which is explained bydoi:10.1063/1.1866634 fatcat:fp752dmeirbm3dsniujfcrd5ri