Application of VEMA type ArF Resist to Sub-100nm Lithography

Hyun-Woo Kim, Sook Lee, Sang-Jun Choi, Sang-Gyun Woo, Yun-Sook Chae, Jisoo Kim, Joo-Tae Moon, Robert Kavanagh, George Barclay
2002 Journal of Photopolymer Science and Technology (Fotoporima Konwakai shi)  
It is expected that ArF lithography will be introduced for device manufacturing for sub-100 nm nodes, as high NA ArF step and scan systems (NA=O.75) become available. We previously reported on a platform, based on a vinyl ether-maleic anhydride (VEMA) alternating polymer system. This platform demonstrated both good resolution and high dry etch resistance in comparison to other platforms based on acrylate and cyclic-olefin-maleic anhydride (COMA) polymer systems. The VEMA platform has been
more » ... form has been continuously improved to meet the increasing requirements, such as resolution, depth of focus (DOF), iso-dense bias, and post-etch roughness for real device manufacturing. This VEMA system is being implemented for sub-100 nm device with high NA (NAO.75) =ArF exposure systems. In this paper, recent experimental results are reviewed. Photoresist, chemically amplified resist, ArF, lithography, VEMA.
doi:10.2494/photopolymer.15.529 fatcat:cmxqgls2azbclj3tvfvn7qzhtu