Surface Oxidation Effect During high Temperature Vacuum Annealing on the Electrical Conductivity of ZnO thin Films Deposited by ALD

Jin-Yong Kim, Yong-June Choi, Hyung-Ho Park
2012 Journal of the Microelectronics and Packaging Society  
The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at 600 o C under 10 -10 Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum
more » ... emperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.
doi:10.6117/kmeps.2012.19.2.073 fatcat:sxub5wiwprh5xbhnkp6y5ccecu