Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors

A. F. M. Anwar, Syed S. Islam, Richard T. Webster
2004 Applied Physics Letters  
Articles you may be interested in Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: A comparison with Schottky devices J. Appl. Phys. 116, 054510 (2014); 10.1063/1.4892486 Carrier trapping and current collapse mechanism in GaN metal-semiconductor field-effect transistors On the origin of low frequency noise in GaAs metal-semiconductor field-effect transistors High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor
more » ... junction transistor The low frequency noise in GaN field effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2ϫ10 Ϫ3 to 3ϫ10 Ϫ3 . Temperature dependence of the noise reveals a weak contribution of generation-recombination noise at elevated temperatures.
doi:10.1063/1.1682700 fatcat:fubvvkc35zfp3n2unu3uptbjgm