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Giant HuangRhys Factor for Electron Capture by the Iodine Intersitial in Perovskite Solar Cells
Improvement in the optoelectronic performance of halide perovskite semiconductors requires the identification and suppression of nonradiative carrier trapping processes. The iodine interstitial has been established as a deep level defect and implicated as an active recombination center. We analyze the quantum mechanics of carrier trapping. Fast and irreversible electron capture by the neutral iodine interstitial is found. The effective Huang−Rhys factor exceeds 300, indicative of the strongdoi:10.1021/jacs.1c03064.s001 fatcat:ps4yc7tkmzejrhj2w7v3wn4j3a