Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Davide Garetto, Yoann Mamy Randriamihaja, Denis Rideau, Alban Zaka, Alexandre Schmid, Yusuf Leblebici, Hervé Jaouen
2012 IEEE Transactions on Electron Devices  
Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-ofequilibrium quasi-Fermi levels in proximity of the Si/SiO 2 interface has been studied in detail.
doi:10.1109/ted.2011.2181389 fatcat:hlbjxyqmlbarxabw3x3z5ovlji