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Signatures of a Pressure-Induced Topological Quantum Phase Transition in BiTeI

Xiaoxiang Xi, Chunli Ma, Zhenxian Liu, Zhiqiang Chen, Wei Ku, H. Berger, C. Martin, D. B. Tanner, G. L. Carr
2013 Physical Review Letters  

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2013 pre-print
arXiv:1305.0959v2 fatcat:6uw7kczdfjefbijt7zj2sukcba
2013 pre-print
arXiv:1305.0959v1 fatcat:gczrznv3r5a7hpold3ooipevau
2013 accepted
arXiv:1305.0959v3 fatcat:nyb6gp54mbdipd5xt7utwpv4km
We report the observation of two signatures of a pressure-induced topological quantum phase transition in the polar semiconductor BiTeI using x-ray powder diffraction and infrared spectroscopy. The x-ray data confirm that BiTeI remains in its ambient-pressure structure up to 8 GPa. The lattice parameter ratio c/a shows a minimum between 2.0-2.9 GPa, indicating an enhanced c-axis bonding through pz band crossing as expected during the transition. Over the same pressure range, the infrared
more » ... reveal a maximum in the optical spectral weight of the charge carriers, reflecting the closing and reopening of the semiconducting band gap. Both of these features are characteristics of a topological quantum phase transition, and are consistent with a recent theoretical proposal.
doi:10.1103/physrevlett.111.155701 pmid:24160613 fatcat:lccumlsemjddbb2osnkekdhzra
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Xiaoxiang Xi, Chunli Ma, Zhenxian Liu, Zhiqiang Chen, Wei Ku, H. Berger, C. Martin, D. B. Tanner, G. L. Carr. "Signatures of a Pressure-Induced Topological Quantum Phase Transition in BiTeI." Physical Review Letters 111.15 (2013)