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11-5 シミュレーションを用いた酸化物TFT の欠陥密度評価(第11部門 情報センシング,情報ディスプレイ)
11-5 Trap Density Extraction in Oxide-TFTs Using Device Simulation
2013
Proceedings of the ITE Winter Annual Convention
11-5 Trap Density Extraction in Oxide-TFTs Using Device Simulation
Preserved Fulltext
We have developed a new method to extract the density of trap states from oxide thin-film transistors (TFTs) by combining simulation using a computationally efficient model and measurement by the low-frequency capacitance method. The developed method enables fast and accurate characteristic analyses for oxide-TFTs.
doi:10.11485/itewac.2013.0_11_4
fatcat:h4chgihcpfh5tcfgw5ewiupbf4