Radiation damage in silicon detectors for high-energy physics experiments

M. Bruzzi
2001 IEEE Transactions on Nuclear Science  
Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are described that have been adopted by the high-energy physics community to face the hostile radiation environment where silicon pixel and
more » ... n pixel and microstrip detectors will operate in the Large Hadron Collider.
doi:10.1109/23.958706 fatcat:nhfhm3ki7vdlhcgnjzhv6k55be