A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2022; you can also visit the original URL.
The file type is application/pdf
.
Resistive Switching and Hysteresis Phenomena at Nanoscale
[chapter]
2022
Electric Field in Advancing Science and Technology [Working Title]
Resistive switching at the nanoscale is at the heart of the memristor devices technology. These switching devices have emerged as alternative candidates for the existing memory and data storage technologies. Memristors are also considered to be the fourth pillar of classical electronics; extensive research has been carried out for over three decades to understand the physical processes in these devices. Due to their robust characteristics, resistive switching memory devices have been proposed
doi:10.5772/intechopen.101500
fatcat:beueedkknnhh3jv4n554iioq5a