Low Thermal Budget NiSi Films on SiGe Alloys

S. K. Ray, T. N. Adam, G. S. Kar, C. P. Swann, J. Kolodzey
2002 Materials Research Society Symposium Proceedings  
Nickel silicides were formed on Si (100) substrates and CVD grown Si 0.9 Ge 0.1 /Si layers by low thermal budget annealing of evaporated Ni films to evaluate their utility for ultra shallow junctions. The phase formation and microstructure of silicides formed using conventional furnace and rapid thermal annealing were studied by x-ray diffraction, Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy. RBS simulations and XPS study revealed the
more » ... ion of a ternary nickel germanosilicide phase for the SiGe alloy. The incorporation of Ge resulted in a higher temperature window for the stability of lowresistive monosilicide phase. Electrical properties of the grown silicides were characterized by four-probe resistivity and contact resistance measurements.
doi:10.1557/proc-745-n6.6 fatcat:tx7f3kn4pjdxpckv4my2har3oy