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Nickel silicides were formed on Si (100) substrates and CVD grown Si 0.9 Ge 0.1 /Si layers by low thermal budget annealing of evaporated Ni films to evaluate their utility for ultra shallow junctions. The phase formation and microstructure of silicides formed using conventional furnace and rapid thermal annealing were studied by x-ray diffraction, Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy. RBS simulations and XPS study revealed thedoi:10.1557/proc-745-n6.6 fatcat:tx7f3kn4pjdxpckv4my2har3oy