Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well

Takeya Unuma, Teruyuki Takahashi, Takeshi Noda, Masahiro Yoshita, Hiroyuki Sakaki, Motoyoshi Baba, Hidefumi Akiyama
2001 Applied Physics Letters  
We experimentally and theoretically study the effects of interface roughness and phonon scattering on intersubband absorption linewidth in a modulation-doped GaAs/AlAs quantum well. Quantitative comparisons between experimental results and theoretical calculations make it clear that interface roughness scattering is the dominant scattering mechanism for absorption linewidth in the temperature range below 300 K. Even at room temperature, phonon scattering processes contribute little to
more » ... while polar-optical phonon scattering limits electron mobility.
doi:10.1063/1.1376154 fatcat:2yarek66mfepfgv2l5nac4ahta