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Graphene base transistors with optimized emitter and dielectrics
2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
The Graphene Base Transistor (GBT) is a very promising device concept for analog applications. The device operates similar to the hot electron transistor and exploits the high carrier mobility of graphene to reduce the base resistance that limits the unity power gain frequency (fmax) and the noise figure (NF) of RF devices. Although the DC functionality of the GBT has been experimentally demonstrated, at present RF performance can be investigated by simulations only. In this paper, we predictdoi:10.1109/mipro.2014.6859528 dblp:conf/mipro/VenicaDPS14 fatcat:ge7ozd6v25ac7ao74q7se2mbnu