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A simple, compact, and fundamental physics-based quasi-analytic model for Single layer graphene field effect transistors (GFETs) with large area graphene is presented in which the quantum mechanical density gradient method is utilised. The basic device physics of the two-dimensional (2D) graphene channel is studied analytically. This modeling leads to the precise drain current calculation of the GFETs. The drain current calculation for GFETs starts from charge carrier concentration, its densitydoi:10.21203/rs.3.rs-893064/v1 fatcat:kkt7aywlizczzlgm3nwaqckxim