Plasma-assisted oxidation, anodization, and nitridation of silicon have been performed in microwave, rf, and dc plasmas with a variety of reactor configurations and a range of plasma densities. Compared to thermal processes at equivalent substrate temperatures, film growth rates are accelerated by the plasma-enhanced generation of reactive chemical species or by the presence of electric fields to aid charged-particle transport during plasma processes. Oxidation, anodization, and nitridation

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... tics, mechanisms, and film properties attainable with plasma enhancement are discussed for crystalline, polycrystalline, and amorphous silicon layers and for silicon-germanium alloys. The use of these plasma methods for surface and interface modification of silicon-based materials and devices is described.