Very high-speed differential optoelectronic algorithmic ADC using n-i(MQW)-n SEED technology

Said F. Al-Sarawi, Neil Burgess, Warren Marwood, Petar B. Atanackovic, Bernard Courtois, Serge N. Demidenko
1999 Design, Characterization, and Packaging for MEMS and Microelectronics  
This paper describes the design of a very high speed optoelectronic analog digital converter based on a digital division algorithm called SRT division using n-i(MQW)-n Self Electro-Optic Effect Device (SEED) technology. The proposed structure is a pipeline ADC. The SRT algorithm was chosen because it provides a redundancy at each stage of the pipeline. The amount of redundancy is dependent on the radix of the SRT algorithm and the number set chosen. The relation between the SRT radix, number
more » ... and the division full range is given in this paper. Also a macro-model for the n-i(MQW)-n device was developed and used to simulate all the circuitry and algorithmic operations needed for the ADC. These included analog addition, analog subtraction and integer multiplication. Based on the developed macro-model and ni(MQW)-n SEED circuit modules a basic unit of the algorithmic ADC was designed. ᭧ (S. Al-Sarawi). Fig. 1. (a) A MQW device structure with its energy band diagram shown in the lower portion as function of the growth direction. (b) Excitonic absorption spectrum at room temperature for 30 × Al 0.3 Ga 0.7 As/GaAs/Al 0.3 Ga 0.7 As quantum wells. The zero bias absorption spectrum is shown as the solid curve and the redshift absorption spectrum due to the applied perpendicular electric field is shown as the dashed curve.
doi:10.1117/12.368435 fatcat:fladep5tmra3rmrojaafhmlzaa