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Micromachining and Microfabrication Process Technology X
Silicon on Insulator (SOI) substrates are being increasingly used in MEMS applications, with the insulating layers serving as etch stop/sacrificial layers and/or device function layers. Apart from the conventional etching requirements including high etch rate, high selectivity and smooth sidewall, satisfactory etching of SOI wafers requires no notching at the silicon/insulator interface. Notching results from electrical charging effects and the consequent bending of the trajectories of arrivingdoi:10.1117/12.582764 fatcat:7jrhs7a4wbdp5naww6maxs5qti