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Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design
2002
IEEE Transactions on Electron Devices
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We have demonstrated a heterojunction bipolar transistor using a novel compound collector (CCHBT) design that allows a low-knee voltage and high-breakdown voltage to be obtained simultaneously. The novel aspect of this design is to use a short wide band-gap collector only over a narrow portion of the collector, where the field is highest. This allows support of high fields while maintaining a low overall collector resistance due to the higher mobility of the narrow band-gap material. We
doi:10.1109/16.992859
fatcat:yghhoj7yczhevo7isgj25dmr4q