Novel method to optimize the column random telegraph signal performance in CMOS image sensor

Pengyu Liu, He Xu, Mengyun Yi, Sheng Zhang
2019 IEICE Electronics Express  
We present a methodology to define and distinguish the column random telegraph noise (RTS) derived from column bitline bias and comparator input transistors only based on the digital output data of each pixel. Many test experiments were conducted on the CMOS image sensor (CIS) chips fabricated with Dongbu 0.13um, 1P5M process technology. According to the experiments, the threshold voltage and the channel length of the transistors have a significant influence on the intensity of the column RTS.
more » ... arge channel length and proper threshold voltage, 0.15V to 0.3V for most cases, mean a low level of column RTS.
doi:10.1587/elex.16.20190118 fatcat:4fxj7uviqrguxp2qvcjdrvobcu