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The far-infrared response of self-assembled In x Ga 1Ϫx As quantum dots located a distance from a twodimensional Al x Ga 1Ϫx As/GaAs interface has been studied as a function of magnetic field. An avoided crossing at about 45 meV, which involves the lowest electronic transition of the dots, has been observed. Calculations of the interaction between the excitations of these quantum dots and the LO phonons of the Al x Ga 1Ϫx As/GaAs interface have been made, and the resulting splitting has beendoi:10.1103/physrevb.56.1516 fatcat:x3ls2cmgnzf2jfmshntqiiq33y