2011) Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units. The synthesis of a new conjugated material is reported; BDHTT-BBT features a central electrondeficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (À5.7 eV) and LUMO (À2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film

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... s. OFETs were constructed with vacuum deposited films of BDHTT-BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 Â 10 À3 cm 2 V À1 s À1 , with an on/off ratio of 10 4 -10 5 and a threshold voltage of À42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.