Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO

Wei He, T. P. Ma
2003 Applied Physics Letters  
We have studied inelastic electron tunneling spectroscopy ͑IETS͒ in silicon metal-oxide-semiconductor systems with HfO 2 and aluminum-doped HfO 2 ͑HfAlO͒ as gate dielectrics. Samples with a thermal SiO 2 layer (ϳ2 nm) were used to obtain reference spectra for the study. Information on chemical bonding structures and compositions of ultrathin HfO 2 and HfAlO has been revealed by the IETS data. The bias polarity dependence of IETS has enabled differentiation of microstructures either near the
more » ... either near the gate electrode interface or near the silicon substrate interface.
doi:10.1063/1.1614837 fatcat:ayr2wsmoxjfxlnealboank2k74