Device Modeling and Measurement for RF Systems [chapter]

Franz Sischka
2000 IFIP Advances in Information and Communication Technology  
The trend to higher integration and higher speed challenges modelling engineers to develop accurate device models up to tens of Gigahertz. An absolute prerequisite for achieving this goal are accurate RF measurements, and correct de-embedding techniques. Without this, RF modelling can become quite time consuming, with a lot of guesswork and ad-hoc judgements. If, however, the underlying measurements are correct, and the models understood weil, RF modelling can provide very accurate design kits.
more » ... Since the introduction of the first integrated circuit, conslstmg of a resistor, a capacitor and a resistor by Kilby in 1958, the number of devices per Ie increased steadily. As a consequence, the size of integrated transistors increased as weIl. Since the early 1970ties, the gate diameter of MOS transistors has decreased by roughly a factor of 100, see fig. l. This implies that the gate area has been reduced by a factor of 100_ = 10000. Since the operating frequency of such transistors is depending mainly on its capacitances, it becomes obvious that the cut-off frequency of modem MOS transistors can be far in the Gigahertz range, see fig. 2 .
doi:10.1007/978-0-387-35498-9_50 fatcat:x4bgyzm2rffidecixzpcjfutue