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Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

Yating Wan, Qiang Li, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, Kei May Lau
2016 Applied Physics Letters  

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Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K
more » ... to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature T o of 105 K has been extracted. Published by AIP Publishing. [http://dx.
doi:10.1063/1.4955456 fatcat:jtirg2hbvne3dcgww3c5s6ezyi
Citation

Yating Wan, Qiang Li, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, Kei May Lau. "Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources." Applied Physics Letters 109.1 (2016) 011104