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A 4Gb/s, 370^|^micro;A low-power Tx FIR driver for LPDDR4 applications
2014
IEICE Electronics Express
Preserved Fulltext
A new low-power Tx FIR driver has been developed targeting for LPDDR4 applications. Both conventional and proposed Tx FIR drivers are designed in 130 nm CMOS process and their performances are compared. The proposed 4 Gb/s FIR driver gets the vertical and horizontal eye-opening by 64.9% and 89.2%, each respectively, at −14.2 dB of channel loss at Nyquist rate and consumes only 370 µA from 1.2 V supply. An low-dropout (LDO) and Op amp blocks to generate the medium DC voltages of pre-emphasis
doi:10.1587/elex.10.20130825
fatcat:pmjfyes6vzazflbyntt3mbth2m