Surface structures of β- FeSi2 formed by heat-treatment in ultra-high vacuum and their influence on homoepitaxial growth

S. Matsumura, K. Ochiai, H. Udono, F. Esaka, K. Yamaguchi, H. Yamamoto, K. Houjo
2011 Physics Procedia  
We have studied the surface structures of single crystalline -FeSi 2 substrate and their influence on homoepitaxial growth. After heat-treatment in ultra-high vacuum above 750°C, where the native oxide layer (SiO x ) on the substrate was removed, characteristic structures depending on the surface orientation were formed on the substrate. On the -FeSi 2 (100) substrate, the round shaped dip structures with conical elevation appeared after heat treatment above 800°C. The composition of the dip
more » ... ition of the dip structures was partially Fe-rich as compared with nominal -FeSi 2 composition (Si/Fe=2). These characteristic structures significantly affected the crystalline quality. They remained in the epitaxial layer after thin film growth. We also achieved homoepitaxial -FeSi 2 films on -FeSi 2 (111) substrate at the growth temperature of 700°C and 800°C.
doi:10.1016/j.phpro.2011.01.048 fatcat:3ywoaqxfffgtzmewj5umpagjn4