Solution processed colloidal semiconductor quantum dots offer a high potential for decreasing costs and expanding versatility of many electronic and optoelectronic devices. Initially used as a research tool to study charge carrier mobilities in closely packed quantum dot thin films, field effect transistors with quantum dots as the active layer have recently experienced a breakthrough in performance (achievement of mobilities higher than 30 cm 2 V À1 s À1 ) as a result of a proper choice of

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... ace ligands and/or improved chemical treatment of the nanoparticle films during device processing. Here we review these innovative developments and the continuing work that may soon lead to commercial grade electronic components. Materials Today Volume 16, Number 9 September 2013 RESEARCH FIGURE 1 (a) Hot injection synthesis method. (b) Trajectory for the precursor concentration, assuming a single initial injection of the latter. (c) Typical evolution of the band edge absorption of PbS QDs with growth duration. (d) PL and absorption for 6.5 nm PbS particles. (c and d) Reproduced from Hines and Scholes [12]. FIGURE 2 Basic configurations of QD based field-effect transistors (FET): (a) bottomgate FET; (b) top-gate FET. L and W show transistor channel length and width, respectively. S, D, and G are the source, drain, and gate electrodes (terminals). Reprinted with permission from Ref. [3].