SOI CMOS Technology with 360GHz fT NFET, 260GHz fT PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications

Sungjae Lee, Jonghae Kim, Daeik Kim, Basanth Jagannathan, Choongyeun Cho, Jim Johnson, Brian Dufrene, Noah Zamdmer, Lawrence Wagner, Richard Williams, David Fried, Ken Rim (+4 others)
2007 2007 IEEE Symposium on VLSI Technology  
We present record-performance RF devices and circuits for an SOI CMOS technology, at 35nm L poly . Critical RF/analog figure of merits in FET such as current gain cut-off frequency (f T ), 1/f noise, and high-frequency noise figure at various bias and temperature conditions are measured and modeled to enable high-performance circuit design. Measurement results show peak f T 's of 340GHz and 240GHz for 35nm L poly NFET and PFET, respectively. At sub-35nm L poly , 360GHz f T NFET and 260GHz f T
more » ... ET are demonstrated. High-Q, high-density vertical native capacitors (VNCAPs) and onchip inductors are integrated. RF-operable ring oscillator (RFRO) demonstrates a 3.58psec delay and a SSB phase noise of -107dBc/Hz at 1MHz offset. LC-tank VCO operates at 70GHz with 9.5% tuning range. The maximum operating frequency of a static CML divider is 93GHz while dissipating 52.4mW.
doi:10.1109/vlsit.2007.4339724 fatcat:trcsntyudbe77auvt2tgghysma