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2007 IEEE Symposium on VLSI Technology
We present record-performance RF devices and circuits for an SOI CMOS technology, at 35nm L poly . Critical RF/analog figure of merits in FET such as current gain cut-off frequency (f T ), 1/f noise, and high-frequency noise figure at various bias and temperature conditions are measured and modeled to enable high-performance circuit design. Measurement results show peak f T 's of 340GHz and 240GHz for 35nm L poly NFET and PFET, respectively. At sub-35nm L poly , 360GHz f T NFET and 260GHz f Tdoi:10.1109/vlsit.2007.4339724 fatcat:trcsntyudbe77auvt2tgghysma