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TMDs, with chemical formula MX2, where M is a group IV, V, or VI transition metal and X is the chalcogenide, is a sub-group of materials with highly tunable properties within the umbrella of van-der-Waals bonded 2D materials . One promising device application for TMDs, most notably MoS2, is as channels in ultra-thin field effect transistors (FETs) . However, a major obstacle in realizing MoS2 channel FETs is the surprisingly high contact resistances measured across the metal contact anddoi:10.1017/s1431927618008279 fatcat:p6sl5lxsgrg7pbczqyktw7zysq