Understanding High Contact Resistance in M0S2 FETs using STEM-EELS

Ryan J. Wu, K. Andre Mkhoyan
2018 Microscopy and Microanalysis  
TMDs, with chemical formula MX2, where M is a group IV, V, or VI transition metal and X is the chalcogenide, is a sub-group of materials with highly tunable properties within the umbrella of van-der-Waals bonded 2D materials [1]. One promising device application for TMDs, most notably MoS2, is as channels in ultra-thin field effect transistors (FETs) [2]. However, a major obstacle in realizing MoS2 channel FETs is the surprisingly high contact resistances measured across the metal contact and
more » ... S2 channel, which severely limits electron injection from the metal [3] . The origins of this resistance continue to be a topic of scientific debate because our understanding of the MoS2 atomic and electronic structure at and near the metal contact interface remains muddled.
doi:10.1017/s1431927618008279 fatcat:p6sl5lxsgrg7pbczqyktw7zysq