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Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition
2022
Coatings
Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and thermal expansion coefficient. This paper describes the successful hetero-epitaxy of InP on a GaAs substrate by metalorganic chemical vapor deposition. The hetero-epitaxy in this study utilized a hybrid
doi:10.3390/coatings12060723
fatcat:yhrr27dm7jejzm6jm7bovejst4