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WARM: Improving NAND flash memory lifetime with write-hotness aware retention management
2015
2015 31st Symposium on Mass Storage Systems and Technologies (MSST)
Increased NAND flash memory density has come at the cost of lifetime reductions. Flash lifetime can be extended by relaxing internal data retention time, the duration for which a flash cell correctly holds data. Such relaxation cannot be exposed externally to avoid altering the expected data integrity property of a flash device. Reliability mechanisms, most prominently refresh, restore the duration of data integrity, but greatly reduce the lifetime improvements from retention time relaxation by
doi:10.1109/msst.2015.7208284
dblp:conf/mss/LuoCGCM15
fatcat:na5e4bwsb5fabkhvlzns6vvaym