In this study, the growth of three important semiconductor nanowires, Zinc Oxide, Indium Oxide and Cadmium Sulfide nanowires using the vapor-liquid-solid (VLS) method has been investigated. Different growth recipes with different growth parameters were incorporated to synthesize high quality and long NWs. It attempts to provide precise growth recipes which lead to high quality of nanowires. The effect of different growth conditions such as growth temperature, carrier gas flow, presence of metal

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... catalyst and growth time has been investigated. Also, to evaluate the crystal quality of the nanowires, photoluminescence (PL) spectra of the as grown nanowires were investigated. Semiconductor NWs have a wide range of applications in diodes, field effect transistors, optoelectronic devices, sensors, thermoelectrical devices, photocatalysis, and piezoelectronics. NW structures exhibit unique and superior properties compared to their bulk counterparts, properties in which their one-dimensional (1D) confined transport of electrons, large surface to volume ratio, quantum confinement, useful for optoelectronic devices, and excellent mechanical properties play key roles. Among the semiconductor NWs the wide variety of electronic and chemical properties of metal oxide semiconductor NWs makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Recently, much research has focused on the fabrication of semiconducting oxide nanowires with wide band-gaps. Of these, Zinc Oxide (ZnO) nanowires have been www.ccsenet.org/apr