Based on the ballistic nature of electron transport, exploitable nonlinear transport phenomena are predicted for three-terminal ballistic junctions ͑TBJs͒. For a symmetric TBJ, it is shown that when finite voltages V l and V r are applied in push-pull fashion, with V l ϭV and V r ϭϪV, to the left and right branches, the voltage output V c from the central branch will always be negative. This characteristic appears even when the device symmetry is broken, provided that ͉V͉ is greater than a

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... in threshold. It is also shown that the TBJs exhibit parabolic behavior for V c vs V, in the weak nonlinear response regime. Potential applications of these devices in nanoelectronics are discussed.