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SILICON DEPOSITION FROM DISILANE : EXPERIMENTAL STUDY AND MODELLING
1991
Journal de Physique IV : Proceedings
Al>stract. SIPOS 1711ns were deposited from a mixture of disilane and nitrous oxide in a tuhulnr 1101 wall reactor and their thickness and oxygcn colilent were measured. To increase one's knowledge in SIPOS deposition. a detailed cllemical mechar~isln is proposed lo represent Iiomogeueous and heterogeneous reactions and Ule CVD2 model taking into account hydrodynamics and Inass Lransferl with chemical reactions is adjusted to SIPOS deposition. A good agreement between experimelikl~ resulrs and
doi:10.1051/jp4:1991207
fatcat:e52ogruf5jgsppta7kb3yl66m4