SILICON DEPOSITION FROM DISILANE : EXPERIMENTAL STUDY AND MODELLING

M. GUEYE, E. SCHEID, P. TAURINES, P. DUVERNEUIL, D. BIELLE-DASPET, J. P. COUDERC
1991 Journal de Physique IV : Proceedings  
Al>stract. SIPOS 1711ns were deposited from a mixture of disilane and nitrous oxide in a tuhulnr 1101 wall reactor and their thickness and oxygcn colilent were measured. To increase one's knowledge in SIPOS deposition. a detailed cllemical mechar~isln is proposed lo represent Iiomogeueous and heterogeneous reactions and Ule CVD2 model taking into account hydrodynamics and Inass Lransferl with chemical reactions is adjusted to SIPOS deposition. A good agreement between experimelikl~ resulrs and
more » ... od el prcdictions for various operating conditions puts in evidence the represent;i[iviry or be chosen chemical mechruiism. By Ule use of CVD2 model, Uie main chemical pathways are identified. Article published online by EDP Sciences and available at http://dx.
doi:10.1051/jp4:1991207 fatcat:e52ogruf5jgsppta7kb3yl66m4