Tantalum-Nitride Antifuse Electromechanical OTP for Embedded Memory Applications

Pushpapraj Singh, Chua Geng Li, Prakash Pitchappa, Chengkuo Lee
2013 IEEE Electron Device Letters  
Embedded nonvolatile memory (NVM) integrated in the back-end of line processes are of high interest, particularly for rugged environments (high temperature/radiation or vibration). This letter demonstrates the use of tantalum nitride microbeams as antifuse one-time programmable (OTP) NVM. It needs a single mask process and can be integrated above an integrated circuit. Typical fusing current is 1 mA, operating voltage is 4 V, and the measured contact resistance is < 2 k . A hybrid
more » ... ybrid onetransistor/one microbeam/bit memory array is proposed for backend compatible and low-cost OTP NVM integration.
doi:10.1109/led.2013.2262918 fatcat:ssg3gaevfvh3dg3k6ryy62bgpm