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Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers
Applied Physics Letters
Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in-and anti-phase bonded interfaces for n-type ͑100͒ GaAs wafers treated at 500, 600, 700 and 850°C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxidedoi:10.1063/1.2185611 fatcat:qkrnbarp6fcsdjgtptfyeuiosa