Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers

Hao Ouyang, YewChung Sermon Wu, Hsiao-Hao Chiou, Chia-Cheng Liu, Ji-Hao Cheng, Wen Ouyang, Shan-Haw Chiou, Sham-Tsong Shiue, Y. L. Chueh, L. J. Chou
2006 Applied Physics Letters  
Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in-and anti-phase bonded interfaces for n-type ͑100͒ GaAs wafers treated at 500, 600, 700 and 850°C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide
more » ... The continuous interfacial oxide layer observed below 700°C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700°C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy.
doi:10.1063/1.2185611 fatcat:qkrnbarp6fcsdjgtptfyeuiosa