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Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits
Photonics and Nanostructures - Fundamentals and Applications
Optical interconnect in integrated optoelectronic circuits is one of the promising next-generation technologies for replacing metalized interconnect. Efforts have been made to use silicon (Si)-compatible materials such as germanium (Ge) and Ge-buffered III-V compound semiconductors, along with Si, as optical sources for Si and group-IV integrated optoelectronic systems. This opens the possibility that higher fraction of Ge with its high refractive index (n) can be incorporated in Si waveguidedoi:10.1016/j.photonics.2013.07.012 fatcat:hstehqiek5hi3fnxwjvvib44hq