Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

S.L. Toh, K. Li, C.H. Ang, R. Rao, E. Er, K.P. Loh, C.B. Boothroyd, L. Chan
Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005.  
We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and contains information relating to the lattice behaviour. These results, when considered and correlated with the plots from HRXRD, allow us to
more » ... HRXRD, allow us to predict the optimized relaxation mechanisms taking place at the interfacial regions.
doi:10.1109/ipfa.2005.1469184 fatcat:dhszqghxojgxnpddm65wpovopa