The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems

S. Bruijn, R.W.E. van de Kruijs, A.E. Yakshin, F. Bijkerk
2009 Defect and Diffusion Forum  
Thermally induced diffusion through the Si-on-Mo interface of multilayers with either amorphous or polycrystalline Mo layers has been investigated using grazing incidence and wide angle x-ray reflectometry. Diffusion through the Mo-on-Si interface was reduced by applying a diffusion barrier, allowing us to probe the diffusion at the opposite, Si-on-Mo interface.We found that diffusion through this interface is much slower for polycrystalline Mo than for amorphous Mo layers. The reason for this
more » ... ifference might be the larger defect concentration in amorphous Mo as compared to crystalline Mo.
doi:10.4028/ fatcat:frpjxr7kmnfmrmnme343dgqih4