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Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs
1982
Physical Review Letters
Preserved Fulltext
Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than (16Å)2.
doi:10.1103/physrevlett.48.1863
fatcat:h67qqpvx2bef5acwd6pf6dokbm