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Memory effect in silicon time-gated single-photon avalanche diodes
2015
Journal of Applied Physics
Articles you may be interested in Time-gated single-photon detection module with 110 ps transition time and up to 80 MHz repetition rate Rev. Sci. Instrum. 85, 083114 (2014); 10.1063/1.4893385 Afterpulse-like noise limits dynamic range in time-gated applications of thin-junction silicon single-photon avalanche diode We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This
doi:10.1063/1.4915332
fatcat:fpxp57jw6fekrf4s2icfg76bge