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Impact of the channel direction on the 1/f noise in SOI-MOSFETs fabricated on (100) and (110) silicon oriented wafers

P. Gaubert, W. Cheng, A. Teramoto, T. Ohmi
2007 AIP Conference Proceedings  

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In this paper we present the study of 1/f noise in SOI n-and p-MOSFET fabricated on Si(100) and Si(110) oriented wafers. A comparison of noise performances are first presented, then the impact of the in-plane channel direction on the low frequency noise for each device is investigated. A particular attention is made for transistors fabricated on Si(110) oriented substrates.
doi:10.1063/1.2759633 fatcat:pod52zjccrfmvgbjt564pvdmvq
Citation

P. Gaubert, W. Cheng, A. Teramoto, T. Ohmi. "Impact of the channel direction on the 1/f noise in SOI-MOSFETs fabricated on (100) and (110) silicon oriented wafers." AIP Conference Proceedings (2007)