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2016 IEEE International Reliability Physics Symposium (IRPS)
The challenge of using inexpensive and high-density NAND flash for archival storage was posed recently for reducing data center costs. However, such flash memory is becoming more susceptible to noise, and its reliability issues has become the major concern for its adoption by long-term storage systems. This paper studies the system-level reliability of archival storage that uses 1x-nm NAND flash memory. We analyze retention error behavior, and show that 1x-nm MLC and TLC flash do notdoi:10.1109/irps.2016.7574572 fatcat:ffidsjzrjnd33do5alycrioxky