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The discovery of ferroelectricity in HfO_2-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances of ferroelectrics are intimately related to their dynamic responses to external stimuli such as electric fields at finite temperatures. Molecular dynamics is an ideal technique for investigating dynamical processes on large length and time scales, though itsarXiv:2010.16082v1 fatcat:col46mgz3va27mhkojflbj5l4u