A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is
Buried-heterostructure AlGaAs lasers on semi-insulating substrates
Integrated Optics and Optical Fiber Communication
was chemically etched in order to obtain a pinch-off voltage of 35 V and an / DSS of 35 mA, as can be seen on Fig. 2 . In this example, the transconductance is 12 mA/V, i.e. 60 mA/V/mm. This result can be considered as typical for a doping level of 10 17 cm" 3 and a full planar structure with the same gate length. A voltage shift of 0-5 V is apparent in the characteristics (Fig. 2) , due to the knee voltage of the Schottky diode. Such transistors have also been measured under high draindoi:10.1364/ofc.1981.mb3 fatcat:ehjyuqf2sndula6eigw62b4y3m