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WO3Thin Films Prepared by Pulsed Laser Deposition
2002
Japanese Journal of Applied Physics
We report the structural and gas sensing properties of tungsten trioxide (WO 3 ) thin films prepared by the KrF excimer pulsed laser deposition technique. The WO 3 thin films having amorphous, crystallized tetragonal and triclinic structures were fabricated at the oxygen pressure of 10-300 mTorr and the substrate temperature of 150-800 C. We revealed the effect of the oxygen pressure and substrate temperature during the deposition on the crystal phases of the WO 3 thin films. The atomic force
doi:10.1143/jjap.41.5372
fatcat:c225esurjvgplkt3pomql7vtsy