High-quality InGaN∕GaN heterojunctions and their photovoltaic effects

Xinhe Zheng, Ray-Hua Horng, Dong-Sing Wuu, Mu-Tao Chu, Wen-Yih Liao, Ming-Hsien Wu, Ray-Ming Lin, Yuan-Chieh Lu
2008 Applied Physics Letters  
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more » ... Appl. Phys. 113, 044502 (2013) Internal detection of surface plasmon coupled chemiluminescence during chlorination of potassium thin films J. Chem. Phys. 138, 034710 (2013) Additional information on Appl. Phys. Lett. High-quality p-GaN / i-In 0.1 Ga 0.9 N / n-GaN heterojunctional epilayers are grown on ͑0001͒-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellösung fringes around the InGaN peak in high-resolution x-ray diffraction ͑HRXRD͒ confirm a sharp interface between InGaN and GaN films. The corresponding HRXRD and photoluminescence measurements demonstrate that there is no observable phase separation. The improvement in crystal quality yields high-performance photovoltaic cells with open-circuit voltage of around 2.1 eV and fill factor up to 81% under standard AM 1.5 condition. The dark current-voltage measurements show very large shunt resistance, implying an insignificant leakage current in the devices and therefore achieving the high fill factor in the illuminated case.
doi:10.1063/1.3056628 fatcat:kgewsqtngranlhppy4d2kdllti