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Modulation of Multilayer InAs Quantum Dot Waveguides under Applied Electric Field
Frontiers in Optics 2007/Laser Science XXIII/Organic Materials and Devices for Displays and Energy Conversion
Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. OCIS codes: (230.4110) Modulators; (250.7360) Waveguide modulators Semiconductor quantum wells and quantum dots are known to be good candidates for switching and modulation devices in photonic integrated circuits . In this regard, we characterized thedoi:10.1364/fio.2007.fmd3 fatcat:aukkyivoljhlrcwzaf6kchmwp4