Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. OCIS codes: (230.4110) Modulators; (250.7360) Waveguide modulators Semiconductor quantum wells and quantum dots are known to be good candidates for switching and modulation devices in photonic integrated circuits [1]. In this regard, we characterized the

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... ectro-absorption and electro-optic properties of multilayer InAs quantum dot waveguides at 1309 and 1515nm. We worked on three layers (3QDs) of quantum dots with the lengths of 1, 1.3, 1.6 mm. The samples are grown by molecular beam epitaxy. The active region is formed by three layers of self-assembled InAs QDs, which are covered by a 5-nm In 0.15 Ga 0.85 As QW and separated from each other by a 40-nm GaAs spacer layer. The areal dot density of our lens-shaped QDs is 3x10 10 cm -2 . For each sample lasing is peaked at nearly 1285nm [2]. Measurement of the electro-absorption and electro-optic coefficients at 1.3 µm was carried out by coupling light from a tunable laser (Santec TSL-320) onto one end of the waveguide with a lens shaped fiber. At 1.5 µm, Santec Tunable LD Light Source TSL-520 was used. A controlled DC voltage source was used to apply 0 to 20 Volts reverse bias to the samples. At each voltage level, the transmission through the device is recorded as a function of wavelength and voltage.